Method of disposing conductive bumps onto a semiconductor device

ABSTRACT

A method of forming conductive structures on the contact pads of a substrate,such as a semiconductor die or a printed circuit board. A solder mask is secured to an active surface of the substrate. Apertures through the solder mask are aligned with contact pads on the substrate. The apertures may be preformed or formed after a layer of the material of which the solder mask is comprised has been disposed on the substrate. Conductive material is disposed in and shaped by the apertures of the solder mask to form conductive structures in communication with the contact pads exposed to the apertures. Sides of the conductive structures are exposed through the solder mask, either by removing the solder mask from the substrate or by reducing the thickness of the solder mask. The present invention also includes semiconductor devices formed during different stages of the method of the present invention.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of application Ser. No. 09/385,584,filed Aug. 27, 1999, pending.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to methods of disposing conductivestructures, such as solder bumps, onto the surfaces of semiconductordevices. In particular, the present invention relates to methods ofemploying solder masks made of dielectric materials to substantiallysimultaneously dispose a plurality of solder bumps onto a semiconductordevice. More specifically, the present invention relates to conductivestructure disposition methods wherein the dielectric solder mask isremovable from the semiconductor device or may otherwise be alteredduring or subsequent to forming the conductive structures to expose thesides, or peripheries, of the conductive structures.

2. Background of Related Art

Conventionally, metal masks were used to selectively control theapplication of solder balls to the contact pads through which asemiconductor device would electrically communicate with other devicesexternal thereto. Metal masks have typically been made from molybdenum,which exhibits long-term dimensional stability at high temperature andmay be reused.

Dry films have also been used as solder masks. Dry films, which aretypically a thin layer of semisolid material that is disposed on acarrier film, may be laminated to the surface of a substrate, such as aprinted circuit board (“PCB”), by heat and vacuum lamination processes.The dry film may then be patterned by exposing selected regions toultraviolet (“UV”) light, which hardens the regions of the dry film thatare to remain and be used as the solder mask. The uncured regions areremoved from the substrate by use of a suitable solvent, such as1,1,1,-trichloroethane, and the remaining portions of the dry film curedby heat or high-energy UV irradiation.

In addition to metal solder masks and dry films, polymers, such asacrylates and epoxies, have also been used as masks for applying solderto semiconductor device substrates, such as printed circuit boards andbare semiconductor devices. Polymers are typically applied to thesurface of the substrate, patterned to expose the contact pads of thesubstrate through the polymer, and cured. Polymers may be applied to thesurface of a substrate by screen printing, which also patterns thepolymer, by curtain coating, by roller coating, or by the use ofelectrostatic spray. The patterning and curing processes employed withpolymeric solder masks depend upon the type of polymer used as thesolder mask. For example, photoimaging or mask and etch techniques maybe employed to pattern the polymer, while the polymer may be cured byheat (for epoxies) or ultraviolet irradiation (for acrylates).

Solder may be applied to metal, dry film, or polymeric solder masks byknown processes, such as by applying solder balls to the apertures ofthe solder mask, forcing solder paste into the apertures of the soldermask, by casting, or by ultrasonic dipping, wherein the masked substrateis immersed in molten solder, which then fills the apertures of thesolder mask.

Following the deposition of solder to contact pads through a metal mask,the apertures of the metal mask must be larger than the cross-section ofthe solder bumps formed therethrough in order to facilitate removal andreuse of the metal solder mask. While dry film and polymeric soldermasks dictate the contact location of a substrate upon which solderbumps are formed or applied, dry film and polymeric solder masks aretypically very thin in order to facilitate their retention on or theirremoval from the substrate. Thus, the apertures of dry film andpolymeric solder masks may not define the configuration of solder bumps;rather, dry film and polymeric solder masks are typically used toposition spherical solder bumps on the contact pads of a substrate.

Spherical solder bumps and other configurations of relatively short,wide solder bumps may stress the adjacent semiconductor device. Suchstress may be caused, for example, by the different coefficients ofthermal expansion of the solder and the adjacent substrate or byconformational changes as the solder bump solidifies.

Thin polymeric films, such as adhesive tapes, have also been applied toprinted circuit boards to be used as solder masks. U.S. Pat. No.5,388,327 (hereinafter “the '327 Patent”), which issued to Trabucco onFeb. 14, 1995, and U.S. Pat. Nos. 5,497,938 (hereinafter “the '938Patent”) and 5,751,068 (hereinafter “the '068 Patent”), which issued toMcMahon et al. on Mar. 12, 1996, and May 12, 1998, respectively,disclose adhesive films that carry preformed conductive bumps. Theconductive bumps carried by the film are aligned with correspondingcontact pads of a printed circuit board, the film is adhered to theprinted circuit board, the conductive bumps are each secured to theircorresponding contact pad, and the film is removed from the printedcircuit board with a solvent. The use of such a carrier film is,however, somewhat undesirable since, during application of the film tothe printed circuit board, air pockets may form between the film and theprinted circuit board and a sufficient contact between one or more ofthe conductive bumps and their corresponding contact pads may not beestablished. Thus, the conductive bumps may not secure sufficiently totheir corresponding contact pads on the printed circuit board toestablish an adequate electrical connection with the contact pads.Moreover, the use of such an adhesive film to facilitate the disposal ofsolder bumps on a bare or minimally packaged semiconductor device is notdisclosed in the '327 Patent, the '938 Patent, or the '068 Patent.

U.S. Pat. Nos. 5,442,852 (hereinafter “the '852 Patent”), 5,504,277(hereinafter “the '277 Patent”), and 5,637,832 (hereinafter “the '832Patent”), which issued to Danner on Aug. 22, 1995, Apr. 2, 1996, andJun. 10, 1997, respectively, each disclose a solder mask that includesan adhesive film with an array of holes therethrough. In use, the holesthrough the film are aligned with corresponding contact pads of aprinted circuit board. Solder balls are then disposed on the contactpads exposed through the holes of the film. The solder mask, however,has a thickness that is significantly less than the height of the solderballs. Thus, the adhesive film solder mask disclosed in the '852, '277,and '832 Patents may be employed to position the solder balls in desiredlocations, but does not include apertures that define the shape of thesolder. Moreover, the use of such an adhesive film to facilitate thedisposal of solder bumps on a bare or minimally packaged semiconductordevice is not disclosed in the '852, '277, or '832 Patents.

Thus, there is a need for a reliable method of efficiently applyingconductive structures, such as solder bumps, of desired configuration tothe contact pads of semiconductor device substrates through a soldermask. There is also a need for a solder mask through which conductivestructures of desired configuration can be reliably and efficientlyapplied to the contact pads of semiconductor device substrates,including bare or minimally packaged semiconductor dice.

SUMMARY OF THE INVENTION

The present invention includes a method of disposing solder bumps on asubstrate, such as a bare or minimally packaged semiconductor device ora printed circuit board (e.g., the printed circuit board of a ball gridarray (“BGA”) package). The method of the present invention employs asolder mask comprising a dielectric film, such as a polymer, siliconoxide, glass (e.g., borophosphosilicate glass (“BPSG”), phosphosilicateglass (“PSG”), or borosilicate glass (“BSG”)), or silicon nitride, withapertures formed therethrough. The present invention also includessolder masks that may be used in the inventive method, as well assemiconductor devices fabricated in accordance with the method of thepresent invention. As used herein, the term “solder mask” is expansiveand not limiting, including structures for application of materials tosubstrates to form conductive elements, whether metallic or nonmetallic.

The method of the present invention includes aligning a film ofdielectric material, such as a polymer, silicon oxide, glass, or siliconnitride, with a substrate, such as a bare or minimally packagedsemiconductor device or a printed circuit board. The film may bepreformed or formed during disposal thereof onto the substrate. The filmhas apertures formed therethrough, which are substantially aligned withcontact pads of the substrate, such as the bond pads of a bare orminimally packaged semiconductor device or the terminals of a printedcircuit board, so as to expose the contact pads through the solder mask.The apertures are configured to impart a solder bump formed therein witha desired configuration. Apertures may be formed in the solder maskprior to, during, or subsequent to disposal of the solder mask on thesubstrate.

Conductive material, such as solder, is applied to the contact pads ofthe substrate through the apertures of the solder mask. Solder may beapplied to the contact pads by known techniques, such as by wave soldertechniques, which are also referred to as thermosonic dipping, byevaporation, by plating, by screen printing, or by disposing solderballs in or adjacent the apertures of the solder mask. Other conductivematerials, such as conductive elastomers, may alternatively be disposedin the apertures of the solder mask by known processes, such as byscreen printing or disposing a quantity of the conductive material in oradjacent each of the apertures of the solder mask. The solder or otherconductive material is molten as it is introduced into the apertures orthereafter. As the solder or other conductive material in the aperturesof the solder mask becomes molten, conductive structures of the desiredshape are substantially simultaneously formed in the apertures andsecured to their corresponding contact pads.

When the formed conductive structures have adequately solidified, thesolder mask may be substantially removed from the substrate. Dependingupon the type of material employed as the solder mask, the solder maskmay be removed by peeling the film from the substrate (e.g., if apolymer is used as the solder mask) by use of suitable solvents (e.g.,if a polymer is used as the solder mask), by etching the film from thesubstrate (e.g., if a polymer, silicon oxide, glass, or silicon nitrideis used as the solder mask), or otherwise, as known in the art.Alternatively, the thickness of the solder mask may be reduced to exposethe sides, or peripheries, of the conductive structures. For example, ifthe solder mask is comprised of a polymeric material that may beshrunken when exposed to a certain chemical or chemicals, to a plasma,or to radiation, the solder mask may be shrunken to expose the sides, orperipheries, of the conductive structures formed therewith. As anotherexample, the thickness of the solder mask may be reduced by etching thedielectric material.

One embodiment of a semiconductor device according to the presentinvention, which represents an intermediate point in the method of thepresent invention, includes a substrate having contact pads on an activesurface thereof and a solder mask comprising a dielectric materialdisposed over the active surface. The solder mask has a thickness thatis substantially the same as the desired height of the conductivestructures to be formed with the solder mask. The solder mask alsoincludes apertures through which selected ones of the contact pads areexposed and into which conductive material is disposable. Thus, theconductive structures of the semiconductor device have not yet beenexposed by removing or reducing the thickness of the solder mask. In onevariation, the substrate is a bare or minimally packaged semiconductordie and the contact pads are the bond pads of the semiconductor die. Inanother variation, the substrate is a printed circuit board and thecontact pads are the terminals of the printed circuit board.

In another embodiment of a semiconductor device according to the presentinvention, a solder mask made of dielectric material is disposed on anactive surface of a substrate. The thickness of the solder mask isreduced (e.g., the layer is shrunken or etched). Conductive structuresare secured to and communicate electrically with the contact pads of thesubstrate, extend through apertures of the reduced-thickness soldermask, and protrude from the solder mask. In one variation, the substrateis a bare or minimally packaged semiconductor die and the contact padsare the bond pads of the semiconductor die. In another variation, thesubstrate is a printed circuit board and the contact pads are theterminals of the printed circuit board.

Other features and advantages of the present invention will becomeapparent to those of ordinary skill in the art through consideration ofthe ensuing description, the accompanying drawings, and the appendedclaims.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a perspective schematic representation of a semiconductordevice according to the present invention;

FIG. 2 is a cross-sectional representation illustrating the placement ofa solder mask on a semiconductor device;

FIG. 3 is a cross-sectional representation illustrating the disposal ofconductive material in the apertures of the solder mask of FIG. 2;

FIG. 4A is a cross-sectional representation illustrating the removal ofthe solder mask of FIG. 3 from the semiconductor device to expose theconductive structures on the contact pads of the semiconductor device;

FIG. 4B is a cross-sectional representation illustrating a reduction inthe thickness of the solder mask of FIG. 3 to expose the conductivestructures on the contact pads of the semiconductor device;

FIG. 5 is a cross-sectional representation illustrating a variation ofthe configuration of a solder bump fabricated by the method of thepresent invention;

FIG. 6 is a cross-sectional representation illustrating a secondvariation of the configuration of a solder bump fabricated by the methodof the present invention;

FIG. 7 is a cross-sectional representation illustrating a thirdvariation of the configuration of a solder bump fabricated by the methodof the present invention;

FIG. 8 is a cross-sectional representation illustrating a fourthvariation of the configuration of a solder bump fabricated by the methodof the present invention; and

FIG. 9 is a schematic representation, in perspective view, of asemiconductor wafer including a plurality of unsingulated, conductivelybumped semiconductor dice.

DETAILED DESCRIPTION OF THE INVENTION

With reference to FIG. 1, a semiconductor device 10 according to thepresent invention, which includes a substrate 12 with integratedcircuitry thereon and contact pads 14 (see FIGS. 2-8) in electricalcommunication with the integrated circuitry is illustrated. As depicted,substrate 12 is a semiconductor die and contact pads 14 are the bondpads of the semiconductor die. Typically and conventionally, the bondpads, when used with a tin/lead solder, may be coated with a pluralityof superimposed metal layers to enhance the bonding of the solder to themetal of the bond pad. Further, contact pads may be offset from the bondpads and connected thereto by circuit traces extending over the activesurface so as to rearrange an input/output pattern of bond pads to apattern more suitable for an array of conductive bumps. Semiconductordevice 10 also includes a solder mask 16 comprised of dielectricmaterial disposed over an active surface 13 of substrate 12. Solder mask16 includes apertures 18 aligned substantially over contact pads 14.Conductive structures 24 are disposed in apertures 18 so as tocommunicate electrically with their corresponding contact pads 14exposed to apertures 18. As used herein, the term “semiconductor die”encompasses partial and full wafers as well as other nonwafer-basedsubstrates, including, by way of example only, silicon on sapphire(“SOS”), silicon on glass (“SOG”) and, in general, silicon on insulator(“SOI”) substrates.

While semiconductor device 10 is depicted as including a semiconductordie, solder masks and conductive structures within the scope of thepresent invention may also be disposed on other types of substrates,such as printed circuit boards and other substrates with electricalcircuitry and electrical contact pads thereon.

An exemplary method for fabricating semiconductor device 10 isillustrated in FIGS. 2-4B. FIG. 2 illustrates the alignment of a soldermask 16 with features on active surface 13 of substrate 12 and thedisposal of solder mask 16 on active surface 13. Specifically, apertures18 through solder mask 16 are substantially aligned with correspondingcontact pads 14 on active surface 13. Thus, contact pads 14 are eachexposed through their corresponding aperture 18.

As an example of the manner in which solder mask 16 may be disposed onactive surface 13, a solder mask 16 comprising a film of a dielectricmaterial with preformed apertures 18 therethrough may be aligned withthe features of active surface 13, such as contact pads 14, and secured(e.g., by a pressure sensitive adhesive) to active surface 13.Preferably, the material from which solder mask 16 is made is anonconductive polymer, such as a polyimide, that withstands thetemperatures of the molten conductive materials, such as solders (e.g.,temperatures from about 190° C. to about 260° C.) or conductiveelastomers, to be disposed within apertures 18 without undergoingsubstantial conformational changes and without substantially degrading.Alternatively, solder mask 16 can be made of other dielectric materials,such as silicon oxide, glass (e.g., BPSG, PSG, or BSG), or siliconnitride. Apertures 18 may be preformed through the film of dielectricmaterial by known laser ablation or laser drilling processes, by knownmask and etch processes, or by other known micron-scale andsubmicron-scale processes for patterning the particular dielectricmaterial employed as solder mask 16.

Alternatively, a layer of photoimageable polymeric material, such as aphotoimageable polyimide, may be disposed on active surface 13 by knownprocesses, such as by spin-on techniques, by curtain coating, by rollercoating or by use of electrostatic spray. Solder mask 16 and theapertures 18 therethrough may then be formed from the layer ofphotoimageable material by known photoimaging processes, therebysubstantially exposing contact pads 14 to apertures 18 and throughsolder mask 16. Again, the photoimageable polymeric material preferablywithstands the temperatures of molten conductive material (e.g.,solders, metals, and metal alloys) to be disposed within apertures 18without undergoing substantial conformational changes or substantialdegradation.

As another alternative, solder mask 16 may be fabricated by disposing alayer of dielectric material, such as a nonphotoimageable polyimide,silicon oxide, glass, or silicon nitride, on active surface 13 ofsubstrate 12 by known processes. For example, known spin-on techniquesmay be employed to form layers of polymeric material and glass on activesurface 13. As another example, layers of polymeric material may also bedisposed on active surface 13 by curtain coating, by roller coating, byuse of electrostatic spray, or by screen printing, which also patternsthe layer of polymeric material substantially simultaneously withdisposing the polymeric material on active surface 13. Known chemicalvapor deposition (“CVD”) techniques may be employed to dispose a layerof silicon oxide, glass, or silicon nitride on active surface 13.

Apertures 18 may be formed through the dielectric material by knownprocesses, such as by disposing a photomask over regions of the layer ofdielectric material that are to remain on active surface 13 and byremoving the dielectric material located above contact pads 14 throughholes in the photomask. For example, known isotropic (e.g., wet chemicaletching) and anisotropic, or dry, etch processes, such as barrel plasmaetching (“BPE”) and reactive ion etching (“RIE”) processes, may beemployed to form apertures 18 through a layer of polymeric material.Etching processes may likewise be used to form apertures 18 throughsilicon oxide, glass, and silicon nitride solder masks 16.

With reference to FIG. 3, a quantity of conductive material 22 is thendisposed within each aperture 18 of solder mask 16. Conductive material22 may be disposed within apertures 18 in molten or liquid form, as apowder, or as a paste. If solder, such as a tin/lead solder, is employedas conductive material 22, known processes may be employed to apply fluxand the solder to the exposed surface of solder mask 16 and to disposethe solder within apertures 18. For example, known wave solder processesor solder ball disposition techniques may be employed to dispose theconductive material 22 into apertures 18. While in apertures 18,conductive material 22 is liquified, which permits conductive material22 to substantially fill each aperture 18. As the conductive materialsolidifies, it bonds to the portions of contact pads 14 exposed throughapertures 18, forming conductive structures 24 that are electricallylinked to each of the contact pads 14 exposed to apertures 18. The shapeof each conductive structure 24 is determined by the shape of theaperture 18 in which conductive structure 24 was formed.

Alternatively, other types of conductive materials, such as z-axis andother conductive or conductor-filled elastomers, other metals, and metalalloys, may be similarly disposed within apertures 18 and in contactwith contact pads 14 to form conductive structures 24. If a conductiveelastomer is employed as the conductive material 22 used to formconductive structures 24, the conductive elastomer will preferably notadhere substantially to or diffuse substantially into adjacent regionsof the material of solder mask 16.

Referring now to FIG. 4A, a method of exposing the sides, orperipheries, of conductive structures 24 is illustrated. Once conductivestructures 24 have been formed on contact pads 14, solder mask 16 may beremoved from active surface 13 of substrate 12. Solder mask 16 may bepeeled from active surface 13, removed therefrom by use of a suitablesolvent, such as antimony trichloride when solder mask 16 is fabricatedfrom a polyimide material, or etched from active surface 13 by knownprocesses. If an etchant is employed to remove solder mask 16, theetchant preferably removes the material of solder mask 16 withselectivity over conductive material 22 of conductive structures 24. Ifan elastomeric conductive material is employed to fabricate conductivestructures 24, the technique by which solder mask 16 is removed fromactive surface 13 preferably does not substantially affect theconfigurations of the elastomeric conductive structures 24.

FIG. 4B illustrates a method of exposing the sides, or peripheries, ofconductive structures 24 by reducing the thickness of solder mask 16relative to the height of conductive structures 24. The thickness ofsolder mask 16 may be reduced by use of a suitable solvent or by etchingthe material of solder mask 16. If an etchant is employed to reduce thethickness of solder mask 16, the etchant preferably removes the materialof solder mask 16 with selectivity over conductive material 22 ofconductive structures 24.

Alternatively, other means of reducing the thickness of solder mask 16may also be employed, such as shrinking a polymeric solder mask 16 withan oxygen plasma, with another type of plasma, with chemical shrinkingagents, or by exposing solder mask 16 to radiation. An exemplary methodof shrinking small spheres made of polystyrene, polydivinylbenzene, orpolytoluene is disclosed in U.S. Pat. No. 5,510,156, which issued toZhao on Apr. 23, 1996, the disclosure of which is hereby incorporatedherein by this reference in its entirety. If an elastomeric material isemployed to fabricate conductive structures 24, the technique by whichthe thickness of solder mask 16 is reduced preferably does notsubstantially affect the configurations of the elastomeric conductivestructures 24.

Although FIGS. 2-4B illustrate substantially cylindrically configuredconductive structures 24, conductive structures of other shapes are alsowithin the scope of the present invention. FIGS. 5-8 illustrate somealternatively configured conductive structures that may be fabricated inaccordance with the method of the present invention.

With reference to FIG. 5, a conductive structure 24′ that tapers inwardfrom the top portion thereof toward contact pad 14 is shown. Thus, theportion of conductive structure 24′ adjacent to contact pad 14 is thenarrowest portion of conductive structure 24′. The aperture 18 (seeFIGS. 2-4B) within which conductive structure 24′ is formed may bedefined through solder mask 16 by known processes, such as isotropicetching processes, that will provide an aperture 18 having aconfiguration complementary to that of conductive structure 24′.

FIG. 6 illustrates a conductive structure 24″ that tapers outward fromthe top portion thereof toward contact pad 14. As illustrated, thethickest portion of conductive structure 24″ is adjacent to contact pad14, while the narrowest portion of conductive structure 24″ is the topthereof. The aperture 18 (see FIGS. 2-4B) within which conductivestructure 24″ is formed may be defined through solder mask 16 by knownprocesses, such as isotropic etching processes, that will provide anaperture 18 having a configuration complementary to that of conductivestructure 24″.

FIG. 7 illustrates a conductive structure 24′″ with an upper portion 24a′″ having a transverse cross section taken along the height of upperportion 24 a′″ of substantially uniform configuration. A lower portion24 b′″ of conductive structure 24′″ is located between contact pad 14and upper portion 24 a′″. The transverse cross section taken along theheight of lower portion 24 b′″ also has a substantially uniformconfiguration. Lower portion 24 b′″ has a smaller transverse crosssection than upper portion 24 a′″. The aperture 18 (see FIGS. 2-4B)within which conductive structure 24 b′″ is formed may be defined bydisposing a photomask of the type disclosed in U.S. Pat. No. 5,741,624,which issued to Jeng et al. on Apr. 21, 1998, the disclosure of which ishereby incorporated herein in its entirety by this reference. Materialof the solder mask 16 may then be removed by known etching processesthrough holes in the photomask to define stepped apertures 18 overcontact pads 14.

Turning to FIG. 8, another conductive structure 124 is illustrated.Conductive structure 124 has an outwardly curved center portion, whichis thicker than the ends of conductive structure 124. Known processes,such as isotropic etching techniques, may be employed to form apertures18 through solder mask 16 (see FIGS. 2-4B) within which conductivestructure 124 may be formed.

Of course, solder masks 16 having different shapes of apertures 18, aswell as solder masks 16 having apertures 18 with combinations ofdifferent shapes, are also within the scope of the present invention.Accordingly, the present invention also includes semiconductor deviceswith combinations of different shapes of conductive structures on thecontact pads thereof

FIG. 9 illustrates that the above-described processes may be employed toform conductive structures on substrates 12 (FIGS. 1-8), in this casesemiconductor dice, before the semiconductor dice have been singulatedfrom a semiconductor wafer 30. Accordingly, semiconductor wafers 30including a plurality of unsingulated, conductively bumped substrates 12are also within the scope of the present invention. Individualconductively bumped semiconductor devices 10 may subsequently besingulated from semiconductor wafer 30 by known singulation processes,such as by the use of a wafer saw 40.

Although the foregoing description contains many specifics and examples,these should not be construed as limiting the scope of the presentinvention, but merely as providing illustrations of some of thepresently preferred embodiments. Similarly, other embodiments of theinvention may be devised which do not depart from the spirit or scope ofthe present invention. The scope of this invention is, therefore,indicated and limited only by the appended claims and their legalequivalents, rather than by the foregoing description. All additions,deletions and modifications to the invention as disclosed herein andwhich fall within the meaning of the claims are to be embraced withintheir scope.

1. A method of disposing a conductive structure on at least one contactpad on an active surface of a semiconductor device substrate,comprising: disposing a layer comprising polymeric material over thesubstrate; imparting said layer with a thickness substantially equal toa desired height of the conductive structure; forming at least oneaperture through said layer to expose at least a portion of the at leastone contact pad; disposing a quantity of conductive material on saidlayer and permitting said conductive material to substantially fill saidat least one aperture; bonding said conductive material within said atleast one aperture to the at least one contact pad to form theconductive structure of substantially said desired height; and partiallyexposing a lateral periphery of the conductive structure through saidlayer.
 2. The method of claim 1, wherein said disposing said quantity ofconductive material on said layer comprises disposing a quantity ofsubstantially molten conductive material on said layer.
 3. The method ofclaim 2, wherein said bonding is effected as said quantity ofsubstantially molten conductive material solidifies in said at least oneaperture.
 4. The method of claim 1, wherein said disposing said layercomprises adhering a film to a surface of the substrate.
 5. The methodof claim 1, wherein said disposing said layer comprises placing aquantity of polymeric material on the substrate and wherein saidimparting comprises spreading said polymeric material to a substantiallyconsistent thickness over at least a portion of a surface of thesubstrate.
 6. The method of claim 1, wherein said forming said at leastone aperture occurs prior to said disposing said layer over thesubstrate.
 7. The method of claim 1, wherein said forming said at leastone aperture comprises etching said at least one aperture through saidlayer.
 8. The method of claim 7, wherein said etching occurs followingsaid disposing said layer over the substrate.
 9. The method of claim 1,wherein said partially exposing said lateral periphery of the conductivestructure comprises reducing said thickness of said layer.
 10. Themethod of claim 9, wherein said reducing said thickness comprisespartially etching said layer.
 11. The method of claim 9, wherein saidreducing said thickness comprises shrinking said layer.
 12. The methodof claim 11, wherein said shrinking comprises exposing said layer toradiation, exposing said layer to a shrinking agent, or exposing saidlayer to a plasma.
 13. The method of claim 1, wherein said partiallyexposing said lateral periphery comprises exposing said layer to asolvent.
 14. The method of claim 1, wherein said disposing said quantityof conductive material comprises immersing a surface of the substratehaving said layer disposed thereon within a quantity of moltenconductive material.
 15. The method of claim 1, wherein said disposingsaid quantity of conductive material comprises disposing solder on saidlayer.
 16. The method of claim 1, wherein said disposing said quantityof conductive material comprises disposing conductive elastomer on saidlayer.
 17. The method of claim 1, wherein said forming said at least oneaperture comprises exposing a portion of said at least one contact padlocated within a periphery thereof.
 18. A method of forming a soldermask, comprising: disposing a solder mask material comprising a polymeronto an active surface of a substrate; forming a layer of said soldermask material having a substantially consistent thickness on the activesurface of said substrate, said thickness of said layer beingsubstantially equal to a desired conductive structure height; andforming at least one aperture through said layer in a locationcorresponding to a location of at least one contact pad of saidsubstrate to expose said at least one contact pad through said soldermask material, said solder mask material facilitating a partialreduction in said thickness when a conductive structure has been atleast partially formed in said at least one aperture.
 19. The method ofclaim 18, wherein said disposing and said forming said layer areeffected substantially simultaneously.
 20. The method of claim 18,wherein said forming said layer comprises planarizing said layer. 21.The method of claim 18, wherein said forming said layer comprisessoftening or melting said solder mask material.
 22. The method of claim21, wherein said forming said layer comprises spinning said solder maskmaterial over said active surface.
 23. The method of claim 21, whereinsaid forming said layer comprises spreading said solder mask materialacross said active surface.
 24. The method of claim 18, wherein saidforming said at least one aperture comprises etching a region of saidlayer. 25.The method of claim 18, wherein said solder mask materialcomprises a photosensitive polymeric material and wherein said formingsaid at least one aperture comprises exposing a region of saidphotosensitive polymeric material disposed over said at least onecontact pad to form said at least one aperture through said layer.
 26. Amethod of exposing at least a portion of a lateral periphery of aconductive structure on a semiconductor device, comprising partiallyreducing a thickness of a solder mask that comprises polymeric materialdisposed around said lateral periphery.
 27. The method of claim 26,wherein said reducing said thickness comprises irradiating said soldermask, exposing said solder mask to a plasma, or exposing said soldermask to a shrinking agent.
 28. The method of claim 26, wherein saidreducing said thickness comprises selectively etching a material of saidsolder mask with respect to the conductive structure.
 29. A method ofexposing a conductive structure that protrudes from a surface of asemiconductor device through a solder mask that comprises a polymericmaterial positioned on the surface of the semiconductor device,comprising: partially reducing a thickness of at least portions of thesolder mask laterally surrounding the conductive structure.
 30. Themethod of claim 29, wherein said partially reducing comprises reducing athickness of substantially all of the solder mask.
 31. The method ofclaim 29, wherein said partially reducing comprises exposing the soldermask to at least one of radiation, a plasma, and a shrinking agent. 32.The method of claim 29, wherein said partially reducing comprisesremoving a material of the solder mask with selectivity over a materialof the conductive structure.
 33. The method of claim 32, wherein saidremoving comprises etching the material of the solder mask withselectivity over the material of the conductive structure.